Electrical properties of digital-alloy (AlxGa1-x)As/GaAs during molecular beam epitaxy growth
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jin Soak | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Song, Jin Dong | - |
dc.contributor.author | Lee, Jung Il | - |
dc.date.accessioned | 2022-12-21T08:02:25Z | - |
dc.date.available | 2022-12-21T08:02:25Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180037 | - |
dc.description.abstract | We have investigated the electrical properties of digital-alloy AlGaAs on GaAs by using capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. During molecular beam epitaxy growth, digital-alloy and analogue-alloy samples were prepared. The digital-alloy layer consists of hundreds of AlAs and GaAs layers each thickness of 2 monolayers. Most properties of the digital alloy were similar to the analogue alloy, but some electrical properties from these of digital-alloy were quite different to the analogue-alloy from the C-V and low-temperature DLTS measurements. Especially, the superlattice structures slightly interrupt carrier motion at low temperatures (< 80 K); then, a signal whose origin seems to be a hetero barrier of the GaAs/AlGaAs quantum well is found, and its average activation energy is estimated to be about 45 meV. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical properties of digital-alloy (AlxGa1-x)As/GaAs during molecular beam epitaxy growth | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.50.1912 | - |
dc.identifier.scopusid | 2-s2.0-34547349040 | - |
dc.identifier.wosid | 000247326800061 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1912 - 1915 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1912 | - |
dc.citation.endPage | 1915 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001063280 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordAuthor | digital-alloy | - |
dc.subject.keywordAuthor | superlattices | - |
dc.subject.keywordAuthor | MBE | - |
dc.subject.keywordAuthor | AlAs/GaAs | - |
dc.subject.keywordAuthor | deep-level transient spectroscopy | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8617&vmd=Full | - |
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