Electrical and optical properties of a GaN n(+)-p junction with high-energy electron irradiation
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Lee, Byung Cheol | - |
dc.contributor.author | Oh, Dae Kon | - |
dc.date.accessioned | 2022-12-21T08:02:31Z | - |
dc.date.available | 2022-12-21T08:02:31Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180038 | - |
dc.description.abstract | We report on the electrical and optical properties of a GaN n(+)-p junction diode structure that was grown by metal-organic chemical vapor deposition (MOCVD) and was fabricated and irradiated by using an electron beam with energies of 1 MeV and 2 MeV at electron irradiation dose of 1 x 10(15) cm(-2) and 1 x 10(16) cm(-2) for each energy. The deep level transient spectroscopy (DLTS) results show that defect states were generated in the GaN n(+)-p diodes after the electron irradiations. The defect densities and the energy locations of the defect states between the energy gap showed a dependence on the irradiation energy and dose. Also, the diode's optical responsivity was characterized in the ultraviolet region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical and optical properties of a GaN n(+)-p junction with high-energy electron irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.50.1904 | - |
dc.identifier.scopusid | 2-s2.0-34547240154 | - |
dc.identifier.wosid | 000247326800059 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1904 - 1907 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1904 | - |
dc.citation.endPage | 1907 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001063278 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ALGAN | - |
dc.subject.keywordAuthor | DLTS | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | diode | - |
dc.subject.keywordAuthor | electron irradiation | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8634&vmd=Full | - |
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