Current-voltage characteristics of a metal-insulator-semiconductor structure containing metal oxide nanoparticles within a polyimide matrix

Abstract

A chemical reaction between polyamic acid, a precursor of polyimide known as a stable insulating polymer, and a metal thin film makes metal-oxide nanoparticles located in polyimide matrix. In a metal-oxide-semiconductor (MOS) diode with such nanoparticles and polyimide, the current-voltage (I-V) characteristics behave abnormally, not showing the general MOS property. The characteristics possibly apply to resistance random access memory (RRAM). In this study, we investigated the conductance and the I-V characteristics with temperature modulation that divide the effects of the activation energy. The I-V hysteresis from a measured voltage sweep is an interesting physical phenomenon and is useful in many applications.