Electron and hole storage in a floating gate consisting of Si nanocrystals embedded in a SiO2 layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Do Hyun | - |
dc.contributor.author | Lee, Soojin | - |
dc.contributor.author | Cho, Woon Jo | - |
dc.contributor.author | Kim, Jae Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T08:02:59Z | - |
dc.date.available | 2022-12-21T08:02:59Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180042 | - |
dc.description.abstract | The charge storage in a nano-floating gate consisting of Si nanocrystals (Si-NCs) embedded in a SiO2 layer formed on a Si substrate by using a sonochemical method was investigated. The transmission electron microscopy image and the photoluminescence spectrum showed that Si-NCs were embedded in a SiO2 layer. The capacitance-voltage curves and the electrostatic force microscopy (EFM) images showed that charge storage appeared in the Si-NCs embedded in a SiO2 layer. The EFM images for the Si-NCs embedded in a SiO2 layer under positive and negative voltages showed that electrons and holes were captured in the Si-NCs. The present results indicate that EFM images provide promising evidence for charge storage in Si-NCs embedded in a SiO2 layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electron and hole storage in a floating gate consisting of Si nanocrystals embedded in a SiO2 layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.3938/jkps.50.1755 | - |
dc.identifier.scopusid | 2-s2.0-34547283477 | - |
dc.identifier.wosid | 000247326800028 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1755 - 1759 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 50 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1755 | - |
dc.citation.endPage | 1759 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001194422 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SILICON NANOCRYSTALS | - |
dc.subject.keywordPlus | MEMORY CHARACTERISTICS | - |
dc.subject.keywordPlus | CHARGE INJECTION | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | DOTS | - |
dc.subject.keywordAuthor | Si nanocrystals | - |
dc.subject.keywordAuthor | sonochemical method | - |
dc.subject.keywordAuthor | charge storage | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?uid=8598&vmd=Full | - |
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