Dependence of electrical characteristics on Si thickness and Ge concentration for unstrained Si grown on strained SiGe-on-insulator n-metal-oxide-semiconductor field-effect transistor

Abstract

The dependencies of the electrical characteristics of n-metal-oxide-semiconductor field-effect transistors (n-MOSFETs) on the nano-scale Si thickness (<20nm) and Ge concentration for unstrained Si grown on strained SiGe-on-insulator were investigated. As the Si thickness decreased, the electron mobility decreased more significantly than the strained Si n-MOSFET grown on relaxed SiGe-on-insulator (SGOI). In addition, the electron mobility decreased with increasing the Ge concentration, contrary to strained Si SGOI n-MOSFET.