Wideband and low noise CMOS amplifier for UWB receivers

Abstract

An ultra-wideband (UWB) low noise amplifier (LNA) that consists of two common-source and shunt-feedback stages is presented. Measurement results show the maximum gain (S-21) of 13.5 dB with the 3-dB band from 1.85 to 10.2 GHz and return losses (S-11, S22) of less than -10 dB from 3 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 1.85 to 10.2 GHz. To our knowledge, these are the best measured data up to date for the CMOS LNA. The input-referred third-order intercept point (IIP3) and the input-referred 1-dB compression point (P-IdB) are obtained as -1 dBm and -9 dBm, respectively, while consuming 13 mW in 0.18 mu m RF CMOS process.