Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers

Abstract

The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E-1-HH1) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E-1-HH1) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.