Surface morphologies and optical properties in CdxZn1-xTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

Abstract

We have studied the growth of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on both GaAs (100) and Si (100) substrates by using molecular beam epitaxy (MBE). The atomic force microscopy (AFM) images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on GaAs (100) and Si (100) substrates. The photoluminescence (PL) spectra at 25 K for the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates correspond to the exciton transition from the ground-state electronic subband to the ground-state heavy-hole band (E-1-HH1). The activation energy of the electrons confined in the Cd0.6Zn0.4Te/ZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent PL spectra.