Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma
DC Field | Value | Language |
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dc.contributor.author | Kononenko, Oleg V | - |
dc.contributor.author | Noh, YS | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Choi, WK | - |
dc.date.accessioned | 2022-12-21T09:08:51Z | - |
dc.date.available | 2022-12-21T09:08:51Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2007-02 | - |
dc.identifier.issn | 1063-7397 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180464 | - |
dc.description.abstract | Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0-90. It is revealed that the nitrogen concentration in the films depends on the Ar-to-NO flow-rate ratios as well as on the nitrogen concentration in the process environment. The highest doping level of nitrogen (4.3 at %) is achieved in films deposited at a substrate temperature of 300°C and an Ar-to-NO flow-rate ratio of 90:1. These films are found to contain Zn-N bonds, but not N-O bonds. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Pleiades Publishing | - |
dc.title | Nitrogen concentration in ZnO films grown by magnetron sputtering in an Ar-NO plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1134/S1063739707010039 | - |
dc.identifier.scopusid | 2-s2.0-33846782587 | - |
dc.identifier.bibliographicCitation | Russian Microelectronics, v.36, no.1, pp.27 - 32 | - |
dc.relation.isPartOf | Russian Microelectronics | - |
dc.citation.title | Russian Microelectronics | - |
dc.citation.volume | 36 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 27 | - |
dc.citation.endPage | 32 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Argon | - |
dc.subject.keywordPlus | Chemical bonds | - |
dc.subject.keywordPlus | Magnetron sputtering | - |
dc.subject.keywordPlus | Nitrogen compounds | - |
dc.subject.keywordPlus | Nitrogen oxides | - |
dc.subject.keywordPlus | Plasmas | - |
dc.subject.keywordPlus | Sapphire | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Ar-NO plasma | - |
dc.subject.keywordPlus | Doping level | - |
dc.subject.keywordPlus | Nitrogen-doped ZnO films | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.identifier.url | https://link.springer.com/article/10.1134/S1063739707010039 | - |
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