Chemical and electrical properties of ZnS deposited with DEZ and H 2S by atomic layer deposition method

Abstract

ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl-Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 ?/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.