Formation and interface analysis of Ti/Ni/Ti/Au ohmic contacts on n-type 6H-SiC
DC Field | Value | Language |
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dc.contributor.author | Lee, JW | - |
dc.contributor.author | Angadi, Basavaraj | - |
dc.contributor.author | Park, HC | - |
dc.contributor.author | Park, Deok Hai | - |
dc.contributor.author | Choi, Jang Wook | - |
dc.contributor.author | Choi, Won Kook | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-12-21T09:32:48Z | - |
dc.date.available | 2022-12-21T09:32:48Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180571 | - |
dc.description.abstract | We present the results of Ti/Ni/Ti/Au multilayer ohmic contacts on n-type 6H-SiC and their interface analysis. The as-deposited contacts show rectifying behavior and, with the increase in annealing temperature, they gradually transform to high-quality ohmic contacts exhibiting linear current-voltage characteristics. The interface evolution was analyzed through glancing angle X-ray diffraction, Auger electron spectroscopy, and atomic force microscopy. The TiSi2 and Ni2Si formed at the interfaces during the low-temperature annealing initiate the conversion from Schottky to ohmic behavior, while the increased Ni2Si formation at high-temperature annealing makes the perfect ohmic contacts. The results were interpreted through the thermodynamic reaction mechanisms. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Formation and interface analysis of Ti/Ni/Ti/Au ohmic contacts on n-type 6H-SiC | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1149/1.2761526 | - |
dc.identifier.scopusid | 2-s2.0-34548201853 | - |
dc.identifier.wosid | 000248984700061 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.10, pp.H849 - H852 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 154 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | H849 | - |
dc.citation.endPage | H852 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | NICKEL | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2761526 | - |
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