Magnetic and optical properties of (Ga1-xMnx)As diluted magnetic semiconductor quantum wires with above room ferromagnetic transition temperature
DC Field | Value | Language |
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dc.contributor.author | Jeon, Him Chan | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Yu, Young Jun | - |
dc.contributor.author | Jhe, Wonho | - |
dc.contributor.author | Song, Se Ahn | - |
dc.date.accessioned | 2022-12-21T09:35:53Z | - |
dc.date.available | 2022-12-21T09:35:53Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2007-01 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180596 | - |
dc.description.abstract | Scanning electron microscopy and high-resolution transmission electron microscopy measurements showed that the self-assembled (Ga0.8Mn0.2)As quantum wires (QWRs) grown on GaAs (100) substrates by using molecular beam epitaxy were straight crystals. The magnetization curve as functions of the magnetic field at 5 K indicated that the (Ga0.8Mn0.2)As QWRs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga0.8Mn0.2)As diluted magnetic semiconductor (DMS) QWRs was as high as 350 K. Near-field scanning optical microscopy spectra showed the interband transitions of the (Ga0.8Mn0.2)As QWRs, indicative of the Mn atoms acting as substituents. These results indicate that the (Ga1-xMnx)As DMS QWRs with a high Mn concentration hold promise for potential application in spin optoelectric devices operating at room temperature. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Magnetic and optical properties of (Ga1-xMnx)As diluted magnetic semiconductor quantum wires with above room ferromagnetic transition temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1063/1.2422914 | - |
dc.identifier.scopusid | 2-s2.0-33847723398 | - |
dc.identifier.wosid | 000243890800034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | III-V SEMICONDUCTORS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MAGNETOELECTRONICS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | NANORODS | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2422914 | - |
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