Determination of thermal conductivity of amorphous silicon thin films via non-contacting optical probing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Seung Jae | - |
dc.date.accessioned | 2022-12-21T09:39:25Z | - |
dc.date.available | 2022-12-21T09:39:25Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-12 | - |
dc.identifier.issn | 1013-9826 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180633 | - |
dc.description.abstract | "The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Trans Tech Publications Ltd | - |
dc.title | Determination of thermal conductivity of amorphous silicon thin films via non-contacting optical probing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Moon, Seung Jae | - |
dc.identifier.doi | 10.4028/0-87849-415-4.689 | - |
dc.identifier.scopusid | 2-s2.0-33751527219 | - |
dc.identifier.bibliographicCitation | Key Engineering Materials, v.326-328 I, pp.689 - 692 | - |
dc.relation.isPartOf | Key Engineering Materials | - |
dc.citation.title | Key Engineering Materials | - |
dc.citation.volume | 326-328 I | - |
dc.citation.startPage | 689 | - |
dc.citation.endPage | 692 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Amorphous films | - |
dc.subject.keywordPlus | Crystallization | - |
dc.subject.keywordPlus | Ellipsometry | - |
dc.subject.keywordPlus | Heat transfer | - |
dc.subject.keywordPlus | Light transmission | - |
dc.subject.keywordPlus | Liquid crystal displays | - |
dc.subject.keywordPlus | Optical properties | - |
dc.subject.keywordPlus | Refractive index | - |
dc.subject.keywordPlus | Thermal conductivity | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Amorphous silicon thin films | - |
dc.subject.keywordPlus | Spectroscopic ellipsometry | - |
dc.subject.keywordPlus | Thin film optics | - |
dc.subject.keywordPlus | Transmissivity | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordAuthor | Amorphous silicon thin film | - |
dc.subject.keywordAuthor | Ellipsometry | - |
dc.subject.keywordAuthor | Optical properties | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.subject.keywordAuthor | Thin film optics | - |
dc.subject.keywordAuthor | Transmissivity | - |
dc.identifier.url | https://www.scientific.net/KEM.326-328.689 | - |
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