Charging and discharging mechanims of vertically stacked Ni 1-xFex self-assembled nanoparticle arrays embedded in polyimide layers

Abstract

Experimental and theoretical capacitance-voltage (C-V) curves for the Al/PI/multiple-stacked Ni1-xFex nanoparticle arrays/PI/p-Si (100) structures at 300 K showed that the flatband voltage shift of the metal-insulator-semiconductor capacitor was affected by the value of the sweep voltage, indicative of the variations of the charged electron density in the multiple-stacked Ni1-xFex nanoparticle arrays. Experimental and theoretical current-voltage (I-V) results showed that the current increased with increasing applied voltage due to thermally assisted tunneling effect. Charging and discharging mechanisms of vertically stacked Ni1-xFex self-assembled nanoparticle arrays embedded in PI layers are described on the basis of the C-V and I-V results.