Optical properties and deep levels in annealed Si1-xMnx bulk materials
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Yunhee | - |
dc.contributor.author | Kang, Tae Won | - |
dc.contributor.author | Park, Cheol-Joon | - |
dc.contributor.author | Cho, Hoonyoung | - |
dc.contributor.author | Kim, Tate Whan | - |
dc.contributor.author | Lee, Jooyoung | - |
dc.contributor.author | Wang, Kang L. | - |
dc.contributor.author | Kim, Bo Ock | - |
dc.contributor.author | Kim, Sunmo | - |
dc.contributor.author | Cho, Yong-Hoon | - |
dc.date.accessioned | 2022-12-21T10:06:10Z | - |
dc.date.available | 2022-12-21T10:06:10Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-10 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180883 | - |
dc.description.abstract | The optical proper-ties and the deep levels in bulk Si1-xMnx formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si1-xMnx samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si1-xMnx material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si1-xMnx showed deep levels related to the interstitial and substitutial sites of the Mn+ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si1-xMnx material. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Optical properties and deep levels in annealed Si1-xMnx bulk materials | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tate Whan | - |
dc.identifier.doi | 10.1016/j.ssc.2006.07.032 | - |
dc.identifier.scopusid | 2-s2.0-33747812642 | - |
dc.identifier.wosid | 000240894400004 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.140, no.1, pp.14 - 17 | - |
dc.relation.isPartOf | SOLID STATE COMMUNICATIONS | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 140 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 14 | - |
dc.citation.endPage | 17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | MN | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | impurities in semiconductor | - |
dc.subject.keywordAuthor | electronic states | - |
dc.subject.keywordAuthor | optical properties | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0038109806006727?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.