Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic
DC Field | Value | Language |
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dc.contributor.author | Lee, Junghwan | - |
dc.contributor.author | Chung, Eunyoung | - |
dc.contributor.author | Moon, Won | - |
dc.contributor.author | Suh, Dong Hack | - |
dc.date.accessioned | 2022-12-21T10:06:31Z | - |
dc.date.available | 2022-12-21T10:06:31Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-10 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180885 | - |
dc.description.abstract | In this paper, we investigate the effect of water (H2O) molecules evolving from silicon dioxide (SiO2) film deposited by low pressure chemical vapor deposition (LPCVD) at 670 degrees C on the transistor characteristic of an electrically erasable programmable read only memory (EEPROM) cell. Fourier Transform Infra red (FT-IR) analysis reveals that H2O is captured during film deposition and diffused to silicon surface during high thermal processing. The diffused HO molecules lower threshold voltage (V-t) of cell transistor and, thus, leakage current of the cell transistor is increased. In erased cell, V-t lowering is 0.25 V in which it increases leakage current of cell transistor from 1 to 100 pA. This results in the lowering of high voltage margin of a 512 Kb EEPROM from 2.8 to 2.6 V at 85 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Suh, Dong Hack | - |
dc.identifier.doi | 10.1016/j.mee.2006.03.003 | - |
dc.identifier.scopusid | 2-s2.0-33745142580 | - |
dc.identifier.wosid | 000238919300017 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.83, no.10, pp.2001 - 2003 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 83 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2001 | - |
dc.citation.endPage | 2003 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | EEPROM | - |
dc.subject.keywordAuthor | cell Vt | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931706003170?via%3Dihub | - |
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