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Magnetic properties and electronic structure of Cr-diffused SiC(100)

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dc.contributor.authorKim, Yoon-Suk-
dc.contributor.authorLee, Sung-Ho-
dc.contributor.authorChung, Yong-Chae-
dc.date.accessioned2022-12-21T10:13:51Z-
dc.date.available2022-12-21T10:13:51Z-
dc.date.issued2006-10-
dc.identifier.issn0018-9464-
dc.identifier.issn1941-0069-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/180956-
dc.description.abstractThe magnetic and electronic properties of chromium-diffused beta-SiC(100) was investigated using the ab initio pseudopotential plane wave method. It is found that the Cr-adsorbed SiC(100)-p(2 x 1) system shows a half-metallic property and represents stable ferromagnetism with 4 mu(B) magnetic moments. On the contrary, a half-metallic property could not be found for SiC(100):Cr-c(4 x 2) and -c(2 x 2) systems due to the surface electronic states of SiC(100).-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleMagnetic properties and electronic structure of Cr-diffused SiC(100)-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TMAG.2006.878848-
dc.identifier.scopusid2-s2.0-85008015694-
dc.identifier.wosid000240888700151-
dc.identifier.bibliographicCitationIEEE Transactions on Magnetics, v.42, no.10, pp 2709 - 2711-
dc.citation.titleIEEE Transactions on Magnetics-
dc.citation.volume42-
dc.citation.number10-
dc.citation.startPage2709-
dc.citation.endPage2711-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSURFACE RECONSTRUCTION-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordAuthorbeta-SiC-
dc.subject.keywordAuthordiluted magnetic semiconductors (DMS)-
dc.subject.keywordAuthorelectronic structure-
dc.subject.keywordAuthorenergetic stability-
dc.subject.keywordAuthorsurface formation energy-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/1704413-
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