Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF co-sputtering method
DC Field | Value | Language |
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dc.contributor.author | Lee, Jonghyun | - |
dc.contributor.author | Choi, Wonjoon | - |
dc.contributor.author | Kim, Chaeok | - |
dc.contributor.author | Hong, Jinpyo | - |
dc.contributor.author | Nahm, Tschang-Uh | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.date.accessioned | 2022-12-21T10:32:50Z | - |
dc.date.available | 2022-12-21T10:32:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181032 | - |
dc.description.abstract | Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF co-sputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of similar to 370 nm at room temperature. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF co-sputtering method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jinpyo | - |
dc.contributor.affiliatedAuthor | Nahm, Tschang-Uh | - |
dc.identifier.scopusid | 2-s2.0-33749818831 | - |
dc.identifier.wosid | 000240570400059 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1126 - 1129 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 49 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1126 | - |
dc.citation.endPage | 1129 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | PL | - |
dc.subject.keywordAuthor | bandgap | - |
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