Magnetotransport properties of zinc-blende-structured MnAs films with half-metallic characteristics

Abstract

Zinc-blende-structured MnAs epitaxial films were grown on GaAs (100) substrates with InAs buffer layer. The resistivity and the Hall resistance behavior at various temperatures indicate that the MnAs thin film is half-metallic in nature. A MnAs/GaAs/MnAs spin-valve structure, fabricated utilizing half-metallic MnAs thin films, exhibited giant magnetoresistance properties. The ability to fabricate epirelated half-metallic films on semiconductor surface can facilitate construction of many spin valves and related devices for potential spintronics and magnetic memory applications.