Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Jae Hun | - |
dc.contributor.author | Kim, Jae-Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Song, Mun Seop | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.contributor.author | Jin, Sungho | - |
dc.date.accessioned | 2022-12-21T10:37:05Z | - |
dc.date.available | 2022-12-21T10:37:05Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181069 | - |
dc.description.abstract | The bistable effects of cuprous oxide (Cu2O) nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that Cu2O nanocrystals were formed inside the PI layer. Current-voltage (I-V) measurements on Al/PI/nanocrystalline Cu2O/PI/Al structures at 300 K showed a nonvolatile electrical bistability behavior. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated utilizing self-assembled inorganic Cu2O nanocrystals embedded in an organic PI layer hold promise for potential applications in nonvolatile flash memory devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.1063/1.2355465 | - |
dc.identifier.scopusid | 2-s2.0-33748960123 | - |
dc.identifier.wosid | 000240680300061 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.89, no.12 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 89 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | CHARGE-TRANSFER | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2355465 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.