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Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer

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dc.contributor.authorJung, Jae Hun-
dc.contributor.authorKim, Jae-Ho-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorSong, Mun Seop-
dc.contributor.authorKim, Young-Ho-
dc.contributor.authorJin, Sungho-
dc.date.accessioned2022-12-21T10:37:05Z-
dc.date.available2022-12-21T10:37:05Z-
dc.date.created2022-09-16-
dc.date.issued2006-09-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181069-
dc.description.abstractThe bistable effects of cuprous oxide (Cu2O) nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that Cu2O nanocrystals were formed inside the PI layer. Current-voltage (I-V) measurements on Al/PI/nanocrystalline Cu2O/PI/Al structures at 300 K showed a nonvolatile electrical bistability behavior. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated utilizing self-assembled inorganic Cu2O nanocrystals embedded in an organic PI layer hold promise for potential applications in nonvolatile flash memory devices.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.titleNonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.contributor.affiliatedAuthorKim, Young-Ho-
dc.identifier.doi10.1063/1.2355465-
dc.identifier.scopusid2-s2.0-33748960123-
dc.identifier.wosid000240680300061-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.89, no.12-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume89-
dc.citation.number12-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusCHARGE-TRANSFER-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusBISTABILITY-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.2355465-
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서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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