Fabrication and electrical characterization of a floating gate capacitor with ln(2)O(3) nano-particles

Abstract

In2O3 has a direct band gap with energy of 3.6 eV and is expected to be used in microelectronics devices such as solar cells, organic light-emitting diodes, flat-panel displays, and gas sensors. To fabricate an indium-oxide nano-particle,we deposited thin indium films with thickness of 5, 10, and 15 nm on Si substrates by using a thermal evaporator, and we spin-coated polyamic acid (PAA) on the indium films. They were cured at 400 degrees C for 1 hour in a rapid thermal annealing system under a N-2 atmosphere. An electrical characterization of the indium-oxide nano-particles was carried out by using capacitance-voltage (C-V) measurement. This system shows a potential for device application such as a nano-floating gate memories.