Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Investigation of current on the conducting target biased with a large negative potential in the non-uniform plasma

Full metadata record
DC Field Value Language
dc.contributor.authorChoe, Jae-Myung-
dc.contributor.authorChung, Kyoung-Jae-
dc.contributor.authorHwang, Hui-Dong-
dc.contributor.authorHwang, Yong-Seok-
dc.contributor.authorKo, Kwang-Cheol-
dc.contributor.authorKim, Gon-Ho-
dc.date.accessioned2022-12-21T10:55:52Z-
dc.date.available2022-12-21T10:55:52Z-
dc.date.created2022-09-16-
dc.date.issued2006-07-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181238-
dc.description.abstractIt was investigated the current on a biased target in the non-uniform plasma. The argon plasma was generated at the low pressure of 0.5-5 mTorr and the stainless steel target was biased with 0.2-6kV negatively. The target current increases with increasing the target voltage due to the non-uniform plasma distributed near the target, which follows the Child law. The secondary emission current, following the square root of target voltage, is superposed to the ion current. For the higher pressures of larger than 1.5 mTorr, the target current is larger than the expected current of Bohm current plus the secondary emission current. The deviation increases drastically with increasing the operating pressure, which may due to the local ionization near the target. This phenomenon is important to Understand more accurately the high voltage sheath formation in practices.-
dc.language영어-
dc.language.isoen-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.titleInvestigation of current on the conducting target biased with a large negative potential in the non-uniform plasma-
dc.typeArticle-
dc.contributor.affiliatedAuthorKo, Kwang-Cheol-
dc.identifier.doi10.1143/JJAP.45.L686-
dc.identifier.scopusid2-s2.0-33746284253-
dc.identifier.wosid000239640700024-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.45, no.24-28, pp.L686 - L689-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.citation.volume45-
dc.citation.number24-28-
dc.citation.startPageL686-
dc.citation.endPageL689-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusION-IMPLANTATION-
dc.subject.keywordPlusSHEATH-
dc.subject.keywordPlusDISCHARGE-
dc.subject.keywordAuthortarget current-
dc.subject.keywordAuthornegative bias-
dc.subject.keywordAuthorsheath-
dc.subject.keywordAuthornon-uniform plasma-
dc.subject.keywordAuthorsecondary electron emission-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1143/JJAP.45.L686-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 전기공학전공 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Ko, Kwang Cheol photo

Ko, Kwang Cheol
COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE