Structural, optical, and magnetic properties of As-doped (Zn0.93Mn0.07)O thin films

Abstract

The As-doped (Zn0.93Mn0.07)O thin film prepared by As+ ion implantation showed a clear peak of (A(0),X) having acceptor binding energy of 181 meV. The sample showed high T-C ferromagnetism persisting up to 285 K. The contribution of magnetization from Mn ion at 280 K was determined to be 0.13 mu(B)/Mn. The improved ferromagnetism is expected to be originated from hole-induced ferromagnetism and enhanced magnetic anisotropy because crystallographically improved sample showed p-type conductivity with hole concentration of 4.8 X 10(18) cm(-3) and hole mobility of 11.8 cm(2) V-1 s(-1). These results suggest that high T-C ferromagnetism can be realized by codoping the acceptor dopant and improving the magnetic anisotropy.