Band-gap opening in metallic carbon nanotubes adsorbed on H/Si(001)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jung-Yup | - |
dc.contributor.author | Cho, Jun-Hyung | - |
dc.date.accessioned | 2022-12-21T11:00:12Z | - |
dc.date.available | 2022-12-21T11:00:12Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181279 | - |
dc.description.abstract | A recent scanning tunneling microscope nanolithography technique can fabricate one-dimensional "dangling-bond (DB) wire" by the selective removal of H atoms from a H-passivated Si(001) surface along the Si dimer row. We here theoretically investigate the bonding geometry, band structure, and.binding mechanism of an armchair (3,3) single-walled carbon nanotube (CNT) adsorbed on the DB wire. We find that the formation of C-Si bonds between the CNT and the DB wire gives rise to hybridization between the carbon pi-bond states and the Si dangling-bond states. This hybridization breaks the rotational symmetry of the (3,3) CNT whose pi-bonding and pi-antibonding bands cross at the Fermi level. As a result, the adsorbed CNT opens an energy gap of similar to 0.1 eV, yielding a metal-to-semiconductor transition. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Band-gap opening in metallic carbon nanotubes adsorbed on H/Si(001) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Jun-Hyung | - |
dc.identifier.doi | 10.1063/1.2221909 | - |
dc.identifier.scopusid | 2-s2.0-33749644750 | - |
dc.identifier.wosid | 000239793100105 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.89, no.2 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 89 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | SURFACES | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2221909 | - |
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