Organic bi-stable device fabricated with a sandwich structure of Al/AlDCN/Al nano-crystals surrounded by amorphous Al2O3/AlDCN/Al
DC Field | Value | Language |
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dc.contributor.author | Park, Jea-Gun | - |
dc.contributor.author | Lee, Gon Sub | - |
dc.contributor.author | Chae, Kyo-Suk | - |
dc.contributor.author | Kim, Yoon-Joong | - |
dc.contributor.author | Miyata, Takahiro | - |
dc.date.accessioned | 2022-12-21T11:08:10Z | - |
dc.date.available | 2022-12-21T11:08:10Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181369 | - |
dc.description.abstract | An organic bi-stable device (OBD) was developed and exhibited non-volatile memory characteristics with a current conduction bi-stability of similar to 1 x 10(2) and a threshold voltage of 2.8 V for the writing state. The OBD was fabricated With the following structure: aluminum (Al) layer/conductive organic layer/Al nano-crystals surrounded by amorphous Al2O3/conductive organic layer/Al layer, where the organic material was 2 amino-4, 5-imidazoledicarbonitrile (AIDCN). The Al nano-crystals surrounded by the amorphous Al2O3 were several nanometers in size, with a density of similar to 1 x 10(11)/cm(2). The OBD could only achieve current conduction bi-stability with an Al evaporation rate of loss than 0.3 angstrom/s. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Organic bi-stable device fabricated with a sandwich structure of Al/AlDCN/Al nano-crystals surrounded by amorphous Al2O3/AlDCN/Al | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.scopusid | 2-s2.0-33746055294 | - |
dc.identifier.wosid | 000238324000070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1505 - 1508 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 48 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1505 | - |
dc.citation.endPage | 1508 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | BISTABILITY | - |
dc.subject.keywordAuthor | nonvolatile | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | organic | - |
dc.subject.keywordAuthor | bistability | - |
dc.subject.keywordAuthor | nanocrystals | - |
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