Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
DC Field | Value | Language |
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dc.contributor.author | Kim, Jin Soak | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Song, Jin Dong | - |
dc.contributor.author | Lee, Jung Il | - |
dc.date.accessioned | 2022-12-21T11:09:33Z | - |
dc.date.available | 2022-12-21T11:09:33Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181378 | - |
dc.description.abstract | The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60eV, which may be considered as an EL2 family in a GaAs material. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.title | Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1143/JJAP.45.5575 | - |
dc.identifier.scopusid | 2-s2.0-33745674058 | - |
dc.identifier.wosid | 000240882800048 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6B, pp.5575 - 5577 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 45 | - |
dc.citation.number | 6B | - |
dc.citation.startPage | 5575 | - |
dc.citation.endPage | 5577 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LEVEL TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | DETECTOR | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | deep level transient spectroscopy | - |
dc.subject.keywordAuthor | quantum dot | - |
dc.subject.keywordAuthor | infrared photodetector | - |
dc.subject.keywordAuthor | energy level | - |
dc.subject.keywordAuthor | InAs/GaAs | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.45.5575 | - |
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