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Ferromagnetic formation of two phases due to MnP and InMn3 from InMnP : Zn implanted with Mn (10 at. %)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shon, Yoon | - |
| dc.contributor.author | Lee, Sejoon | - |
| dc.contributor.author | Jeon, Hee Change | - |
| dc.contributor.author | Lee, Seungwoong | - |
| dc.contributor.author | Kim, Deukyoung | - |
| dc.contributor.author | Kang, Taewon Wang | - |
| dc.contributor.author | Kim, Eun Kyu | - |
| dc.contributor.author | Fu, Dejun | - |
| dc.contributor.author | Fan, Xiangjun | - |
| dc.contributor.author | Yoon, Chong S. | - |
| dc.contributor.author | Kim, Chang-kyung | - |
| dc.date.accessioned | 2022-12-21T11:10:45Z | - |
| dc.date.available | 2022-12-21T11:10:45Z | - |
| dc.date.issued | 2006-06 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181388 | - |
| dc.description.abstract | InMnP:Zn samples implanted with Mn (10 at. %) were annealed at 350 degrees C for 60 s and at 450 degrees C for 30 s. Using transmittance electron microscopy, both single crystalline and polycrystalline structures containing MnP and InMn3 sized similar to 20 nm were observed depending on the annealing condition. These samples exhibited two different Curie temperatures: T-C1 at 291 K and another well above 291 K. The high temperature-ferromagnetic behavior up to T-C1 and above T-C2 is believed to have originated from two magnetic MnP and InMn3 phases, respectively. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Ferromagnetic formation of two phases due to MnP and InMn3 from InMnP : Zn implanted with Mn (10 at. %) | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.2207995 | - |
| dc.identifier.scopusid | 2-s2.0-33745020053 | - |
| dc.identifier.wosid | 000238914500049 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.88, no.23 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 88 | - |
| dc.citation.number | 23 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MAGNETIC SEMICONDUCTOR | - |
| dc.subject.keywordPlus | INP | - |
| dc.subject.keywordPlus | GAN | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2207995 | - |
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