Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition
DC Field | Value | Language |
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dc.contributor.author | Jeon, Hee Change | - |
dc.contributor.author | Kang, Taewon Wang | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Cho, Yong Hoon | - |
dc.date.accessioned | 2022-12-21T11:14:03Z | - |
dc.date.available | 2022-12-21T11:14:03Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181406 | - |
dc.description.abstract | (Ga1-xMnx)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga1-xMnx)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga1-xMnx)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga1-xMnx)N thin films appeared. These results indicate that the (Ga1-xMnx)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Band-edge exciton transitions in (Ga1-xMnx)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.ssc.2006.04.010 | - |
dc.identifier.scopusid | 2-s2.0-33646852404 | - |
dc.identifier.wosid | 000238815900005 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.138, no.9, pp.444 - 447 | - |
dc.relation.isPartOf | SOLID STATE COMMUNICATIONS | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 138 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 444 | - |
dc.citation.endPage | 447 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | III-V SEMICONDUCTORS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GAMNN FILMS | - |
dc.subject.keywordPlus | MAGNETOELECTRONICS | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | magnetic films | - |
dc.subject.keywordAuthor | epitaxy | - |
dc.subject.keywordAuthor | impurities in semiconductor | - |
dc.subject.keywordAuthor | optical properties | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0038109806003206?via%3Dihub | - |
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