Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(100) substrates by using molecular beam epitaxy
DC Field | Value | Language |
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dc.contributor.author | Lee, Hong Seok | - |
dc.contributor.author | Park, Hong Lee. | - |
dc.contributor.author | Kim, Tai-Woong | - |
dc.date.accessioned | 2022-12-21T11:16:13Z | - |
dc.date.available | 2022-12-21T11:16:13Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181432 | - |
dc.description.abstract | We have studied structural and optical properties of self-assembled Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si(100) substrates by using molecular beam epitaxy. X-ray diffraction patterns indicated that the ZnTe buffer layers grown on the Si substrates were hetero-epitaxial films with the (100) orientation. The atomic force microscopy images showed that Cd0.6Zn0.4Te/ZnTe QDs were formed on Si(100) substrates. The photoluminescence spectra at 32 K showed the dominant excitonic peaks corresponding to the interband from the ground-state electronic sub-band to the ground-state heavy-hole band in the Cd0.6Zn0.4Te/ZnTe QDs. The present results can help to improve the understanding of the structural and interband transition properties in Cd0.6Zn0.4Te/ZnTe QDs grown on Si(100) substrates. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(100) substrates by using molecular beam epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tai-Woong | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2006.04.083 | - |
dc.identifier.scopusid | 2-s2.0-33745671320 | - |
dc.identifier.wosid | 000239231600003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.292, no.1, pp.10 - 13 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 292 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 10 | - |
dc.citation.endPage | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SINGLE-ELECTRON TRANSISTOR | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | MICROSCOPY | - |
dc.subject.keywordPlus | LEVEL | - |
dc.subject.keywordAuthor | atomic force microscopy | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | molecular beam epitaxy | - |
dc.subject.keywordAuthor | semiconducting ternary compounds | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0022024806004106?via%3Dihub | - |
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