Spatially periodic magnetic structure produced by femtosecond laser-interference crystallization of amorphous Co2MnSi thin film
DC Field | Value | Language |
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dc.contributor.author | Kim, Jung H. | - |
dc.contributor.author | Kim, Jeon | - |
dc.contributor.author | Lim, Sang U. | - |
dc.contributor.author | Kim, Chang K. | - |
dc.contributor.author | Yoon, Chong Seung | - |
dc.contributor.author | Lee, Geon Joon | - |
dc.contributor.author | Lee, Young Pak | - |
dc.date.accessioned | 2022-12-21T11:42:35Z | - |
dc.date.available | 2022-12-21T11:42:35Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181600 | - |
dc.description.abstract | Femtosecond laser-interference crystallization (FLIC) was used to form a spatially periodic magnetic structure by selectively crystallizing a paramagnetic amorphous Co2MnSi thin film. Regularly spaced alternating lines of polycrystalline and microcrystalline regions with a periodicity of 2 mu m were produced by FLIC. The crystalline region composed of similar to 100-nm-sized grains contained a nonequilibrium ferromagnetic phase intermixed with beta-Mn. The areas between the crystallized lines also received sufficient energy, crystallizing into a microcrystalline state with its grain size ranging from 1 to 5 nm. The magnetic force microscopy of the samples clearly revealed the one-dimensional periodic magnetic domains resulting from the modulated microstructure. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Spatially periodic magnetic structure produced by femtosecond laser-interference crystallization of amorphous Co2MnSi thin film | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong Seung | - |
dc.identifier.doi | 10.1063/1.2172196 | - |
dc.identifier.scopusid | 2-s2.0-33646726505 | - |
dc.identifier.wosid | 000237404200361 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.99, no.8, pp.1 - 3 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 99 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2172196 | - |
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