Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Im, Hee-Chun | - |
dc.contributor.author | Kim, Jaeho | - |
dc.contributor.author | Oh, Dong-Hyeun | - |
dc.contributor.author | Kim, Tate Whan | - |
dc.contributor.author | Yoo, Keon Ho | - |
dc.contributor.author | Kim, Moon-Deock | - |
dc.date.accessioned | 2022-12-21T11:42:50Z | - |
dc.date.available | 2022-12-21T11:42:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181602 | - |
dc.description.abstract | Reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and double-crystal X-ray curves showed that high-quality InAs quantum dot (QD) arrays inserted into GaAs barriers were embedded in an Al0.3Ga0.7As/GaAs heterostructure. The temperature-dependent photoluminescence (PL) spectra of the InAs/GaAs QDs showed that the exciton peak corresponding interband transition from the ground electronic subband to the ground heavy-hole subband (E-1-HH1) was dominantly observed and that the peak position and the full width at half maximum corresponding to the interband transitions of the PL spectrum were dependent on the temperature. The activation energy of the electrons confined in the InAs/GaAs QDs was 115 meV. The electronic subband energy and the energy wave function of the Al0.3Ga0.7As/GaAs heterostructures were calculated by using a self-consistent method. The electronic subband energies in the InAs/GaAs QDs were calculated by using a three-dimensional spatial plane wave method, and the value of the calculated (E-1-HH1) transition in the InAs/GaAs QDs was in reasonable agreement with that obtained from the PL measurement. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tate Whan | - |
dc.identifier.doi | 10.1016/j.apsusc.2005.06.023 | - |
dc.identifier.scopusid | 2-s2.0-33646181544 | - |
dc.identifier.wosid | 000237835100016 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.252, no.12, pp.4146 - 4153 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 252 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 4146 | - |
dc.citation.endPage | 4153 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | WELL INFRARED PHOTODETECTORS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | InAs/GaAs quantum dot | - |
dc.subject.keywordAuthor | interband transition | - |
dc.subject.keywordAuthor | activation energy | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433205009335?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.