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Effect of thermal annealing on structural, electrical, and magnetic properties of Ag-doped La0.67Ca0.33MnO3 thin films grown on LaAlO3 substrates

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dc.contributor.authorZhang, Pengxiang-
dc.contributor.authorZhu, Shaojiang-
dc.contributor.authorLiu, Xiang-
dc.contributor.authorPeng, Junbiao-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorHabermeier, HU-
dc.date.accessioned2022-12-21T12:04:04Z-
dc.date.available2022-12-21T12:04:04Z-
dc.date.created2022-08-26-
dc.date.issued2006-02-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181794-
dc.description.abstractResistance as a function of temperature showed that the metal-insulator transition temperatures of as-grown and annealed Ag-doped La0.67Ca0.33MnO3 thin films were 235 and 300 K, respectively, and that the metal-insulator transition ranges of these films were relatively narrow, indicative of a sharp phase transition. The temperature coefficient of resistance was as high as 8% at 276 K. The magnetoresistance ratio of the annealed Ag-doped film under a magnetic field of 5 T was approximately 55% at 285 K.-
dc.language영어-
dc.language.isoen-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.titleEffect of thermal annealing on structural, electrical, and magnetic properties of Ag-doped La0.67Ca0.33MnO3 thin films grown on LaAlO3 substrates-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1143/JJAP.45.727-
dc.identifier.scopusid2-s2.0-32244448430-
dc.identifier.wosid000235692100021-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.2A, pp.727 - 729-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS-
dc.citation.volume45-
dc.citation.number2A-
dc.citation.startPage727-
dc.citation.endPage729-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusRESISTIVITY-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordAuthorAg-doped La0.67Ga0.33MnO3-
dc.subject.keywordAuthorthermal annealing-
dc.subject.keywordAuthorelectrical property-
dc.subject.keywordAuthormagnetic property-
dc.subject.keywordAuthormagnetoresistance ratio-
dc.identifier.urlhttps://iopscience.iop.org/article/10.1143/JJAP.45.727-
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