Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Abstract

The three-dimensional electronic structure in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) were calculated by using a self-consistent method. The electronic energy states and the probability density functions in a three-dimensionally confined quantum structure were determined. The energy states strongly depended on the thickness of the thin oxide layer and the applied gate voltage. The few electrons occupying the Si inversion layer significantly affected the electric potential profile of the inversion layer, and a small variation in the oxide thickness dramatically changed the electronic properties in the Si inversion layer. These results can help in understanding the electronic structures in Si inversion layers of nanoscale MOSFETs.