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Atomic investigation of Al/Ni(001) by molecular dynamics simulation

Authors
Lee, Soon-GunChung, Yong Chae
Issue Date
Jan-2006
Publisher
IOP Publishing Ltd
Keywords
molecular dynamics simulation; interfacial structure; Al/Ni multilayer system; thin-film growth
Citation
Japanese Journal of Applied Physics, v.45, no.1A, pp 99 - 101
Pages
3
Indexed
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
45
Number
1A
Start Page
99
End Page
101
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181859
DOI
10.1143/JJAP.45.99
ISSN
0021-4922
1347-4065
Abstract
Using molecular dynamics simulation, interfacial features of the Ni-Al magnetic metallic multilayer system were quantitatively investigated with regard to substrate temperature and deposition rate. It was found that a mixture confined to a single atomic layer at the Ni(001) surface was clearly formed at relatively high temperatures, 800-1000 K, and that the degree of mixing at the interface was largely dependent on the deposition rate of adatoms. The degree of lateral displacement of Al adatoms on the Ni(001) surface, which is a key parameter for determining the growth mode, was observed to depend on the deposition rate below 700 K.
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