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Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs(100) substrates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Tae Whan | - |
| dc.contributor.author | Jeon, Hee Chang | - |
| dc.contributor.author | Kang, Tae Won | - |
| dc.contributor.author | Lee, Ho Seong | - |
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.contributor.author | Jin, Sungho | - |
| dc.date.accessioned | 2022-12-21T12:13:07Z | - |
| dc.date.available | 2022-12-21T12:13:07Z | - |
| dc.date.issued | 2006-01 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181880 | - |
| dc.description.abstract | Zinc-blende structured MnAs epiaxial films with half metallic characteristics were grown on GaAs (100) substrates. The formation of the zinc-blende structured MnAs on GaAs was made possible via introduction of a strained yet epirelated InAs intermediate layer, the thickness of which was found critical for enabling the half metallic structure. The magnetization curves as functions of the magnetic fields showed magnetic hysteresis and isotropic ferromagnetic properties. The magnetoresistance behavior at various temperatures indicates that the MnAs thin film is half-metallic in nature. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Microstructural and magnetic properties of zinc-blende MnAs films with half metallic characteristics grown on GaAs(100) substrates | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.2162861 | - |
| dc.identifier.scopusid | 2-s2.0-30844439659 | - |
| dc.identifier.wosid | 000234606900026 | - |
| dc.identifier.bibliographicCitation | Applied Physics Letters, v.88, no.2, pp 1 - 3 | - |
| dc.citation.title | Applied Physics Letters | - |
| dc.citation.volume | 88 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ELECTRICAL SPIN INJECTION | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | CRO2 | - |
| dc.subject.keywordPlus | SEMICONDUCTOR | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | STRAIN | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.2162861 | - |
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