Electronic structure and half-metallic property of Mn-doped beta-SiC diluted magnetic semiconductor
DC Field | Value | Language |
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dc.contributor.author | Kim, Yoon-Suk | - |
dc.contributor.author | Chung, Yong Chae | - |
dc.contributor.author | Yi, Sung-Chul | - |
dc.date.accessioned | 2022-12-21T12:14:04Z | - |
dc.date.available | 2022-12-21T12:14:04Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181889 | - |
dc.description.abstract | Using ab initio ultrasoft pseudopotential plane wave method, the effect of doping concentration of Mn on the magnetic properties of beta-SiC (SiC:Mn) was quantitatively investigated. It is found that the SiC:Mn shows stable ferromagnetism, and the total magnetic moment of SiC:Mn depends on the substitution site of Mn in the SiC lattice. Using the density of states calculation, it is shown that SiC:Mn has half-metallic properties for selected doping concentrations of 1.56, 3.13 and 6.25%, irrespective of substitution site. The conduction electron mobility of SiC:Mn-C was expected to be higher than that of SiC:Mn-Si. On the contrary, SiC:Mn-Si has a wider spin band gap compared to SiC:Mn-C. It is predicted that SiC with 12.5% Mn doping represents desirable characteristics for realizing spintronic devices, which include stable ferromagnetism, half-metallic properties, fast electron mobility and a wide spin band gap. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Electronic structure and half-metallic property of Mn-doped beta-SiC diluted magnetic semiconductor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Yong Chae | - |
dc.identifier.doi | 10.1016/j.mseb.2005.09.022 | - |
dc.identifier.scopusid | 2-s2.0-30444437328 | - |
dc.identifier.wosid | 000235115900019 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.126, no.2-3, pp.194 - 196 | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 126 | - |
dc.citation.number | 2-3 | - |
dc.citation.startPage | 194 | - |
dc.citation.endPage | 196 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | AB-INITIO | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordAuthor | diluted magnetic semiconductors | - |
dc.subject.keywordAuthor | beta-SiC | - |
dc.subject.keywordAuthor | half-metal | - |
dc.subject.keywordAuthor | density functional theory | - |
dc.subject.keywordAuthor | electronic structure | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S092151070500615X?via%3Dihub | - |
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