In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates
DC Field | Value | Language |
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dc.contributor.author | Sivasubramani, Prasanna | - |
dc.contributor.author | Park, Tae joo | - |
dc.contributor.author | Coss, Brian E. | - |
dc.contributor.author | Lucero, Antonio | - |
dc.contributor.author | Huang, Jie | - |
dc.contributor.author | Brennan, Barry | - |
dc.contributor.author | Cao, Yu | - |
dc.contributor.author | Jena, Debdeep | - |
dc.contributor.author | Xing, Huili Grace | - |
dc.contributor.author | Wallace, Robert.M. | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.date.accessioned | 2022-12-22T01:38:42Z | - |
dc.date.available | 2022-12-22T01:38:42Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/181987 | - |
dc.description.abstract | We have investigated the effect of trimethyl aluminum (TMA) and water (H 2O) half-cycle treatments on HF-treated, and O 3-oxidized GaN surfaces at 300 °C. The in-situ X-ray photoelectron spectroscopy results indicate no significant re-growth of Ga-O-N or self-cleaning on HF-treated and O 3-oxidized GaN substrates with exposure to water and TMA. This result is different from the self-cleaning effect of Ga 2O 3 seen on sulfur-treated GaAs or InGaAs substrates. O 3 causes aggressive oxidation of GaN substrate and direct O-N bonding compared to H 2O. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. | - |
dc.title | In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae joo | - |
dc.identifier.doi | 10.1002/pssr.201105417 | - |
dc.identifier.scopusid | 2-s2.0-83455236114 | - |
dc.identifier.bibliographicCitation | Physica Status Solidi - Rapid Research Letters, v.6, no.1, pp.22 - 24 | - |
dc.relation.isPartOf | Physica Status Solidi - Rapid Research Letters | - |
dc.citation.title | Physica Status Solidi - Rapid Research Letters | - |
dc.citation.volume | 6 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 22 | - |
dc.citation.endPage | 24 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | GaN | - |
dc.subject.keywordPlus | Half-cycle treatments | - |
dc.subject.keywordPlus | In-situ | - |
dc.subject.keywordPlus | Self-cleaning effects | - |
dc.subject.keywordPlus | Trimethyl aluminums | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Aluminum coatings | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Atomic spectroscopy | - |
dc.subject.keywordPlus | Cleaning | - |
dc.subject.keywordPlus | Gallium alloys | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Sulfur | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Half-cycle treatments | - |
dc.subject.keywordAuthor | In-situ XPS | - |
dc.subject.keywordAuthor | Self-cleaning effects | - |
dc.subject.keywordAuthor | Trimethyl aluminum | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssr.201105417?__cf_chl_jschl_tk__=sK77Q8E4AF7VOs1p6t45zS4hvliCZzk.P7dTKph4JFQ-1639469010-0-gaNycGzNDH0 | - |
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