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Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films
- Authors
- Park, Tae Joo; Sivasubramani, Prasanna; Coss, Brian E.; Lee, Bongki; Wallace, Robert M.; Kim, Jiyoung; Rousseau, Mike; Liu, Xinye; Li, Huazhi; Lehn, Jean-Sebastien; Hong, Daewon; Shenai, Deo
- Issue Date
- Mar-2011
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- PRECURSOR; STABILITY; HFO2 FILMS; XPS; IN-SITU; LANTHANUM OXIDE
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.5, pp.G23 - G26
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 14
- Number
- 5
- Start Page
- G23
- End Page
- G26
- ISSN
- 1099-0062
- Abstract
- The effects of Trimethyl aluminum (TMA) in atomic-layer-deposition (ALD) of La2O3 film using Tris(N, N'-diisopropylformamidinato) lanthanum and H2O were examined. The behaviors of Si diffusion and the residual C and N-related impurities were observed by in situ x-ray photoelectron spectroscopy. The La-silicate formation by Si out-diffusion from the substrate was suppressed by TMA/H2O pulse (Al2O3), but hardly suppressed the interfacial SiO2 layer growth during ALD. It was confirmed that TMA/H2O pulse (Al2O3) insertion eliminated the residual C-and N-related impurities with low binding energy in the La2O3 film which originated from the incomplete reactions of precursor during ALD. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3545965] All rights reserved.
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