Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer
DC Field | Value | Language |
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dc.contributor.author | Na, Kwang Duk | - |
dc.contributor.author | Kim, Jeong Hwan | - |
dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Song, Jaewon | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.contributor.author | Choi, Jung-Hae | - |
dc.date.accessioned | 2022-12-22T02:03:22Z | - |
dc.date.available | 2022-12-22T02:03:22Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182046 | - |
dc.description.abstract | Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance-voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 degrees C in air greatly decreased the interfacial trap density (similar to 2 x 10(12) cm(-2) eV(-1)), X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (<5V) of the device significantly. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1016/j.tsf.2010.04.004 | - |
dc.identifier.scopusid | 2-s2.0-77955662064 | - |
dc.identifier.wosid | 000279659900050 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.18, pp.5326 - 5330 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 5326 | - |
dc.citation.endPage | 5330 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Hafnium oxide | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Metal-insulator-semiconductor capacitor | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609010004979?via%3Dihub | - |
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