Electrical role of sulfur vacancies in MoS2: Transient current approach
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Juchan | - |
dc.contributor.author | Kim, Myung Joon | - |
dc.contributor.author | Jeong, Byeong Geun | - |
dc.contributor.author | Kwon, Chan | - |
dc.contributor.author | Cha, Yumin | - |
dc.contributor.author | Choi, Soo Ho | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.date.accessioned | 2023-02-21T05:28:27Z | - |
dc.date.available | 2023-02-21T05:28:27Z | - |
dc.date.created | 2023-01-05 | - |
dc.date.issued | 2023-03 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/182319 | - |
dc.description.abstract | The electrical role of sulfur vacancies in MoS2 has attracted considerable attention, and numerous studies have attempted to reveal their characteristics in a donor state, an acceptor state, or a neutral state. However, there are still no definitive conclusions, and the debate continues. In this study, we investigated the effect of sulfur vacancies on the electrical properties of MoS2 using transient current measurements. After treatment with hydrazine to generate sulfur vacancies, the density of shallow traps increased by a factor of 4, whereas that of deep-level traps increased by a factor of 200. These results indicate that sulfur vacancies induce both deep- and shallow-level traps, but the trap density is higher at the deep level. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier B.V. | - |
dc.title | Electrical role of sulfur vacancies in MoS2: Transient current approach | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1016/j.apsusc.2022.155900 | - |
dc.identifier.scopusid | 2-s2.0-85144319017 | - |
dc.identifier.wosid | 000906321000001 | - |
dc.identifier.bibliographicCitation | Applied Surface Science, v.613, pp.1 - 6 | - |
dc.relation.isPartOf | Applied Surface Science | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 613 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | ChemistryMaterials SciencePhysics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, PhysicalMaterials Science, Coatings & FilmsPhysics, AppliedPhysics, Condensed Matter | - |
dc.subject.keywordPlus | Hysteresis | - |
dc.subject.keywordPlus | Layered semiconductors | - |
dc.subject.keywordPlus | Molybdenum compounds | - |
dc.subject.keywordPlus | Nitrogen compounds | - |
dc.subject.keywordPlus | Sulfur | - |
dc.subject.keywordPlus | Sulfur compounds | - |
dc.subject.keywordPlus | Chalcogen vacancy | - |
dc.subject.keywordPlus | Chalcogens | - |
dc.subject.keywordPlus | Charge release | - |
dc.subject.keywordPlus | Charge-trapping | - |
dc.subject.keywordPlus | Deep traps | - |
dc.subject.keywordPlus | Deep-levels | - |
dc.subject.keywordPlus | Donor state | - |
dc.subject.keywordPlus | Shallow traps | - |
dc.subject.keywordPlus | Sulfur vacancies | - |
dc.subject.keywordPlus | Transient current | - |
dc.subject.keywordPlus | Transients | - |
dc.subject.keywordAuthor | Chalcogen vacancies | - |
dc.subject.keywordAuthor | Charge trapping and release | - |
dc.subject.keywordAuthor | Deep and shallow traps | - |
dc.subject.keywordAuthor | Hysteresis | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433222034286?via%3Dihub | - |
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