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Structural and Electrical characteristics of Low-k Silicon Oxycarbide thin film deposited via Remote Plasma Atomic Layer Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-02T13:58:38Z | - |
| dc.date.available | 2021-08-02T13:58:38Z | - |
| dc.date.issued | 2019-05-17 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18434 | - |
| dc.title | Structural and Electrical characteristics of Low-k Silicon Oxycarbide thin film deposited via Remote Plasma Atomic Layer Deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2019년도 한국재료학회 춘계학술대회 | - |
| dc.citation.conferencePlace | 평창 알펜시아 리조트 | - |
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