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Study on Epitaxial Process for Dislocation Free SiGe Layer by Ultra-high-vacuum CVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2023-04-03T20:47:53Z | - |
| dc.date.available | 2023-04-03T20:47:53Z | - |
| dc.date.issued | 2022-06-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/184700 | - |
| dc.title | Study on Epitaxial Process for Dislocation Free SiGe Layer by Ultra-high-vacuum CVD | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 13th International Symposium for Advanced Functional Materials & Devices | - |
| dc.citation.conferencePlace | 강원도 홍천 소노벨 비발디 파크 | - |
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