Structural Analysis of InAs1-xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction
DC Field | Value | Language |
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dc.contributor.author | Jung, In-Young | - |
dc.contributor.author | Choi, Minhyuk | - |
dc.contributor.author | Kim, Jeongtae | - |
dc.contributor.author | More, Vivek Mohan | - |
dc.contributor.author | Lee, Sang Jun | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Kim, Chang-Soo | - |
dc.contributor.author | Song, Seungwoo | - |
dc.date.accessioned | 2023-05-03T14:23:44Z | - |
dc.date.available | 2023-05-03T14:23:44Z | - |
dc.date.created | 2022-01-26 | - |
dc.date.issued | 2022-03 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/185421 | - |
dc.description.abstract | InAs1-xSbx epilayer has nonlinearity bandgap energy between 180 and 350 meV according to the relative composition x of Sb at room temperature. For this reason, the wavelengths operating as a photodetector are in the mid-infrared (3-5 mu m) and long-wavelength infrared range (8-12 mu m). Photodetectors of these wavelengths can be used in the fields of pollutant detection, infrared thermal imaging, lidars, or optical countermeasures. Since the bandgap energy of InAs1-xSbx epilayer changes according to the relative composition of Sb, the measurement of InAs1-xSbx epilayer composition is crucial for predicting device characteristics. In this study, high-resolution X-ray diffraction was used to measure the mean composition of specimens without damaging the specimens of InAs1-xSbx epilayer. InAs1-xSbx thin films were grown epitaxially on the GaSb substrate having a similar lattice constant as the thin films by utilizing the molecular beam epitaxy method at various growth temperature conditions. Here, tilt of the growth direction in InAs1-xSbx thin films was observed despite having no off-cut angle of the GaSb substrate. Cases considering and not considering the tilt of the growth direction were analyzed to show a 3% difference in the relative composition of Sb in InAs1-xSbx thin films. Accordingly, this study revealed that the growth tilt of the epilayer must be taken into account when measuring the precise composition of InAs1-xSbx thin films grown on a GaSb substrate using high-resolution X-ray diffraction. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Structural Analysis of InAs1-xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction | - |
dc.title.alternative | Structural analysis of InAs1-xSbx epilayer considering occurrence of crystallographic tilt exploiting high-resolution X-ray diffraction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1007/s13391-021-00329-1 | - |
dc.identifier.scopusid | 2-s2.0-85122068075 | - |
dc.identifier.wosid | 000735733700001 | - |
dc.identifier.bibliographicCitation | Electronic Materials Letters, v.18, no.2, pp.205 - 214 | - |
dc.relation.isPartOf | Electronic Materials Letters | - |
dc.citation.title | Electronic Materials Letters | - |
dc.citation.volume | 18 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 205 | - |
dc.citation.endPage | 214 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.identifier.kciid | ART002818307 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | INASSB | - |
dc.subject.keywordPlus | RELAXATION | - |
dc.subject.keywordPlus | GASB | - |
dc.subject.keywordAuthor | InAs1-xSbx | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | Reciprocal space mapping | - |
dc.subject.keywordAuthor | Crystallographic tilt | - |
dc.identifier.url | https://link.springer.com/article/10.1007%2Fs13391-021-00329-1 | - |
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