Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites
DC Field | Value | Language |
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dc.contributor.author | Kim, Do Hyeong | - |
dc.contributor.author | Kim, Woo Kyum | - |
dc.contributor.author | Woo, Sung Jun | - |
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T14:26:35Z | - |
dc.date.available | 2021-08-02T14:26:35Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18591 | - |
dc.description.abstract | The properties of nonvolatile memristive devices (NMD) fabricated utilizing organic/inorganic hybrid nanocomposites were investigated due to their superior advantages such as mechanical flexibility, low cost, low-power consumption, simple technological process in fabrication and high reproducibility. The current-voltage (I-V) curves for the Al/polyvinylpyrrolidone (PVP): graphene quantum-dot (GQD)/in-dium-tin-oxide (ITO) memristive devices showed current bistability characteristics at 300 K. The window margins corresponding to the high-conductivity (ON) state and the low-conductivity (OFF) state of the devices increased with increasing concentration of the GQDs. The ON/OFF ratio of the optimized device was 1 x 10(4), which was the largest memory margin among the devices fabricated in this research. The endurance number of ON/OFF switching was above 1 x 10(2) cycles, and the retention time was relatively constant, maintaining a value above 104 s. The devices showed high reproducibility with the writing voltage being distributed between -0.5 and -1.5 V and the erasing voltage being distributed between 2 and 3 V. The ON state currents remained between 0.02 and 0.03 A, and the OFF state currents stayed between 10(-6) and 10(-4) A. The carrier transport mechanisms are illustrated by using both the results obtained by fitting the I-V curves and the energy band diagrams of the devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Highly-reproducible nonvolatile memristive devices based on polyvinylpyrrolidone: Graphene quantum-dot nanocomposites | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.orgel.2017.09.005 | - |
dc.identifier.scopusid | 2-s2.0-85029532563 | - |
dc.identifier.wosid | 000418101600021 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.51, pp.156 - 161 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 51 | - |
dc.citation.startPage | 156 | - |
dc.citation.endPage | 161 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ORGANIC BISTABLE DEVICES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordAuthor | Memristive device | - |
dc.subject.keywordAuthor | Graphene quantum-dot | - |
dc.subject.keywordAuthor | PVP | - |
dc.subject.keywordAuthor | Hybrid nanocomposite | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1566119917304433?via%3Dihub | - |
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