Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation
DC Field | Value | Language |
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dc.contributor.author | Miller, Ruth A. | - |
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Chiamori, Heather C. | - |
dc.contributor.author | Dowling, Karen M. | - |
dc.contributor.author | Wang, Yongqiang | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-08-02T14:27:29Z | - |
dc.date.available | 2021-08-02T14:27:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18603 | - |
dc.description.abstract | The electrical characteristics of gallium nitride (GaN) ultraviolet (UV) photodetectors with graphene and semitransparent Ni/Au electrodes subjected to 2 MeV proton irradiation arc reported and compared. Graphene is shown to have a very high transmittance (87%) in the UV regime (365 nm) compared to semitransparent Ni/Au (3 nm/10 nm) films (32%). Correspondingly, microfabricated graphene/GaN photodetectors showed a much higher pre-irradiation responsivity of 3388 A/W, while that of semitransparent Ni/Au/GaN photodetectors was 351 A/W. For both types of electrodes, intermittent current-voltage measurements performed during 2 MeV proton irradiation showed minimal variation up to a fluence of approximately 3.8 x 10(13)cm(-2). Additionally, Raman spectroscopy of 200keV proton beam, 3.8 x 10(13)cm(-2) irradiated graphene showed minimal disorder with only a 6% increase in I-D/I-G compared to pre-irradiated graphene. These results support the use of graphene-enhanced GaN UV photodetectors in radiation-rich environments such as deep space. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1063/1.5005797 | - |
dc.identifier.scopusid | 2-s2.0-85038571570 | - |
dc.identifier.wosid | 000418098900015 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.111, no.24, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 111 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ENERGY-DEPENDENCE | - |
dc.subject.keywordPlus | RADIATION-DAMAGE | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | LAYER | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.5005797 | - |
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