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Low-energy interband transition in the infrared response of the correlated metal SrVO3 in the ultraclean limit

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dc.contributor.authorAhn, Gihyeon-
dc.contributor.authorZingl, Manuel-
dc.contributor.authorNoh, S.J.-
dc.contributor.authorBrahlek, Matthew J.-
dc.contributor.authorRoth, Joseph D.-
dc.contributor.authorEngel-Herbert, Roman-
dc.contributor.authorMillis, Andrew J.-
dc.contributor.authorMoon, Soonjae-
dc.date.accessioned2023-07-05T02:37:39Z-
dc.date.available2023-07-05T02:37:39Z-
dc.date.created2022-10-06-
dc.date.issued2022-08-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/186092-
dc.description.abstractWe studied the low-energy electronic response of the prototypical correlated metal SrVO3 in the ultraclean and disordered limit using infrared spectroscopy and density functional theory plus dynamical mean field theory calculations (DFT+DMFT). A strong optical excitation at 70 meV is observed in the optical response of the ultraclean samples but is hidden by the low-energy Drude-like response from intraband excitations in the more disordered samples. DFT+DMFT calculations reveal that this optical excitation originates from interband transitions between the bands split by orbital off-diagonal hopping, which has often been ignored in cubic systems, such as SrVO3. A memory function analysis of the optical data shows that this interband transition can lead to deviations of optical self-energy from the expected Fermi-liquid behavior. Our findings demonstrate that analysis schemes employed to extract many-body effects from optical spectra may be oversimplified to study the true electronic ground state and that improvements in material quality can guide efforts to refine theoretical approaches.-
dc.language영어-
dc.language.isoen-
dc.publisherAmerican Physical Society-
dc.titleLow-energy interband transition in the infrared response of the correlated metal SrVO3 in the ultraclean limit-
dc.typeArticle-
dc.contributor.affiliatedAuthorMoon, Soonjae-
dc.identifier.doi10.1103/PhysRevB.106.085133-
dc.identifier.scopusid2-s2.0-85137668067-
dc.identifier.wosid000861370000004-
dc.identifier.bibliographicCitationPhysical Review B, v.106, no.8, pp.1 - 8-
dc.relation.isPartOfPhysical Review B-
dc.citation.titlePhysical Review B-
dc.citation.volume106-
dc.citation.number8-
dc.citation.startPage1-
dc.citation.endPage8-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusBANDWIDTH CONTROL-
dc.subject.keywordPlusCONDUCTIVITY-
dc.subject.keywordPlusINSULATOR-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusELECTRODYNAMICS-
dc.subject.keywordPlusCA1-XSRXVO3-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordPlusSTATE-
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.106.085133-
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