Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae-Young | - |
dc.contributor.author | Kang, Min-Su | - |
dc.contributor.author | Yoo, Sehoon | - |
dc.contributor.author | Kim, Young-Ho | - |
dc.contributor.author | Kim, Min-Su | - |
dc.date.accessioned | 2021-07-30T04:53:25Z | - |
dc.date.available | 2021-07-30T04:53:25Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1860 | - |
dc.description.abstract | In this study, the effect of growth of intermetallic compound (IMC) layer between Au-20 wt% Sn solder and electroless Ni/immersion Au (ENIG) on the thermal resistance of a flip-chip (FC) light emitting diode (LED) package was investigated. Two IMC layers were formed at the interface of FC LED package, including Au5Sn and (Ni, Au)(3)Sn-4 that were identified using a transmission electron microscopy. A thermal aging test was carried out at 200 degrees C for 1000 h to observe IMCs growth. After 1000 h, the (Ni, Au)(3)Sn-4 thickness increased to about 1.5 mu m and the thermal resistance of the FC LED package increased by 3.5 times compared to the initial thermal resistance of 2 K W-1. As the (Ni, Au)(3)Sn-4 grew, a calculation of thermal resistance also increased comparing to the initial aging test, thus, the growth of (Ni, Au)(3)Sn-4 layer can be effective factor on the increase of thermal resistances of FC LED package. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Effect of (Ni, Au)(3)Sn-4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young-Ho | - |
dc.identifier.doi | 10.35848/1347-4065/ab922e | - |
dc.identifier.scopusid | 2-s2.0-85087178778 | - |
dc.identifier.wosid | 000546609800015 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.59, pp.1 - 6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 59 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | INTERFACIAL REACTIONS | - |
dc.subject.keywordPlus | AU | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | NI | - |
dc.subject.keywordPlus | CU | - |
dc.identifier.url | https://iopscience.iop.org/article/10.35848/1347-4065/ab922e | - |
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