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'A Novel Gate-All-Around with Back-gate (GAAB) Structure with Highly Scalable in 3-D NAND Flash Memory' 연구 발표
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 송윤흡 | - |
| dc.date.accessioned | 2023-07-05T05:41:57Z | - |
| dc.date.available | 2023-07-05T05:41:57Z | - |
| dc.date.issued | 2023-06-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/186777 | - |
| dc.title | 'A Novel Gate-All-Around with Back-gate (GAAB) Structure with Highly Scalable in 3-D NAND Flash Memory' 연구 발표 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2023년 대한전자공학회 하계종합학술대회 | - |
| dc.citation.conferencePlace | 롯데호텔 제주 중문 | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)