Design of a Low-Power and Area-Efficient LDO Regulator using a Negative-R Assisted Technique
DC Field | Value | Language |
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dc.contributor.author | Kim, Jung Sik | - |
dc.contributor.author | Javed, Khurram | - |
dc.contributor.author | Roh, Jeongjin | - |
dc.date.accessioned | 2023-07-24T09:34:58Z | - |
dc.date.available | 2023-07-24T09:34:58Z | - |
dc.date.created | 2023-07-19 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187387 | - |
dc.description.abstract | To mitigate the non-ideal virtual ground at the feedback node of a low dropout (LDO) regulator, this brief presents an LDO with an off-chip capacitor that uses a negative-R assisted technique, which enhances its performance, including load/line regulation and power supply rejection (PSR). This technique enables the LDO to achieve improved performance despite the small size of the pass transistor, resulting in low-power and area-efficient LDO regulators. The proposed negative-R-assisted LDO provides 100 mA, with load regulation of 0.09 mV/mA, line regulation of 6 mV/V, and PSR of -31 dB. The proposed negative-R-assisted LDO was implemented with 150 nm transistors in a 28 nm standard CMOS process with an active area of 4,200 μm2. The proposed LDO achieves a superior figure-of-merit (FoM) of 13.5 ps (FoM1) and 0.057 ps∙mm2 (FoM2). IEEE | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Design of a Low-Power and Area-Efficient LDO Regulator using a Negative-R Assisted Technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Roh, Jeongjin | - |
dc.identifier.doi | 10.1109/TCSII.2023.3289497 | - |
dc.identifier.scopusid | 2-s2.0-85163489907 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Circuits and Systems II: Express Briefs, pp.1 - 5 | - |
dc.relation.isPartOf | IEEE Transactions on Circuits and Systems II: Express Briefs | - |
dc.citation.title | IEEE Transactions on Circuits and Systems II: Express Briefs | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article in Press | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | area-efficient | - |
dc.subject.keywordAuthor | Gain | - |
dc.subject.keywordAuthor | low dropout (LDO) regulator | - |
dc.subject.keywordAuthor | low-power | - |
dc.subject.keywordAuthor | Mathematical models | - |
dc.subject.keywordAuthor | negative-R-assisted LDO | - |
dc.subject.keywordAuthor | power management IC (PMIC) | - |
dc.subject.keywordAuthor | Regulation | - |
dc.subject.keywordAuthor | Regulators | - |
dc.subject.keywordAuthor | Resistance | - |
dc.subject.keywordAuthor | Transconductance | - |
dc.subject.keywordAuthor | Transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/10163905 | - |
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