High-speed Light Detection Sensor for Hardware Security in Standard CMOS Technology
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dana | - |
dc.contributor.author | Hong, Jong-Phil | - |
dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | Nam, Jae-won | - |
dc.date.accessioned | 2023-07-24T09:35:06Z | - |
dc.date.available | 2023-07-24T09:35:06Z | - |
dc.date.created | 2023-07-19 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187388 | - |
dc.description.abstract | This article presents a triple-times-sensitive light detection sensor. The proposed sensor performs faster initialization starting from a power-up sequence, caused by the additional delay-cell logic. Furthermore, the finger-and well-type photodiodes detect light more quickly than a conventional structure while occupying the same active area of 50 × 50 μmtextsuperscript2. The finger-type structure photodiode demonstrates an external quantum efficiency (EQE) of 76 %, responsivity (R) of 0.336 A/W, specific detectivity (D*) of 5.814 × 1011 Jones, and noise equivalent power (NEP) of 8.599 × 10-17 W with under 550 nm illumination at reverse bias of 1.8 V, which are derived from TCAD simulation results. Both prototype light detection sensor with finger-and well-type photodiodes are implemented in a 180 nm standard CMOS technology (1P6M) and achieved about 3 and 1.3 times faster light detection speed than the conventional structure in optical experiment. IEEE | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | High-speed Light Detection Sensor for Hardware Security in Standard CMOS Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jiwon | - |
dc.identifier.doi | 10.1109/TCSII.2023.3289407 | - |
dc.identifier.scopusid | 2-s2.0-85163500078 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Circuits and Systems II: Express Briefs, pp.1 - 5 | - |
dc.relation.isPartOf | IEEE Transactions on Circuits and Systems II: Express Briefs | - |
dc.citation.title | IEEE Transactions on Circuits and Systems II: Express Briefs | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article in Press | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Capacitance | - |
dc.subject.keywordAuthor | Detectors | - |
dc.subject.keywordAuthor | Hardware security | - |
dc.subject.keywordAuthor | High-speed optical techniques | - |
dc.subject.keywordAuthor | junction capacitance | - |
dc.subject.keywordAuthor | Junctions | - |
dc.subject.keywordAuthor | light detector | - |
dc.subject.keywordAuthor | Photodiodes | - |
dc.subject.keywordAuthor | Security circuit | - |
dc.subject.keywordAuthor | shallow trench isolation | - |
dc.subject.keywordAuthor | silicon photodiode | - |
dc.subject.keywordAuthor | Voltage | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/10163068 | - |
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